Purpose of the development: These devices are used in carrying out of explosive works in building, mining industry and other.

Recommended application field: Building, mining industry and other.

Technical characteristic: Technical characteristics of SSM1; SSM2; SSM3 Sizes of energy emission region: Length, mkm 100; 40; 20. Area, 0.001·mm[2] 38; 8; 2. Threshold sizes: Resistence, Ohm 1-8; 2-10; 2-15. Tension, In 25; 15; 10. Dur. impulse, mks 50-100; 30-100; 20-100. Capacity, mkF 20; 20; 20. Energy, mDg 2.5; 2.0; 1.5.

Advantages over analogues: New semiconductive sources of microheating exceld wire bridges of incandescence times in the fast-acting in 100-1000 in 10 times in consumption energy and are more safe in use.

The development stage readiness: Tested experimental exploitation order

Description of the development:
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The elaborated semiconductive sources of microheating (SSM) are used for local energy emission replace traditional wire bridges of incandescence (which ignite the explosive being on this surface) in the devices.

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Licence's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua