SMALL COMBINED MACHINE FOR DEFECT-FREE CRYSTALS CUTTING
Purpose of the development:
Designed for cutting crystallographically oriented single crystals without making them more structural defects.
Recommended application field:
Microelectronics and electronics industry
Technical characteristic:
- Dimensions - 500h500h500 mm;
- The diameter of the cut crystal - = 50 mm;
- The maximum length of the ingot - 300 mm;
- The size of the plate being cut - 40x50 mm;
- Thread diameter - 0.03-0.3 mm;
- The number of threads - up to 5 pcs.;
- Speed of the yarn - 0.1-1 m / s;
- Pressure on the sample thread - 0.01-0.10 N.
Advantages over analogues:
- No additional structural defects on the cut surface;
- Ability to control the cutting mode;
- The possibility of machine changeovers in chemical, abrasive polychord and options;
- High precision oriented cuts.
The machine has no analogs.
The development stage readiness:
Introduced in production
Technical and economic effect:
- No additional structural defects on the cut surface;
- Ability to control the cutting mode;
- The possibility of machine changeovers in chemical, abrasive polychord and options;
- High precision oriented cuts.
- The machine has no analogs.
Description of the development:
() No violations in the cutting zone is provided by using the principles of chemical or electrochemical etching substances.
The machine can be used for cutting of materials that are amenable to dissolution in liquid media. Working tool of the machine is a thread that moving , addictive etchant into the cutting zone of the crystal and brings out her reaction products . The machine has a control system that provides automatic feeding preform without mechanical contact with the thread , with a feed rate equal to the rate of etching of the sample. Change tooling allows for many- chemical machine cutting and abrasive wire cutting ingots and wafers . In abrasive version control system provides controlled workpiece low contact pressure thread sample .
Machine was tested by cutting semiconductor single crystals (CdHgTe, CdTe, Ge, Si, GaAs, InSb, InAs, CdZnTe, PbSnTe, HgTe, Wi2Te3), and some crystals of alkali metals.
Information about newness of the development:
amount of patent in used -- 1 items
corresponds technical description
Conforms to technical characteristic
Possibility of transfer abroad:
Licence's sale Technological document's sale Realization of finished commodity Joint production, sale, exploitation
Photo
Country
Ukraine
For additional information turn to: E-mail: gal@uintei.kiev.ua
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