Purpose of the development: Designed for high-end polishing wafers of semiconductors and metals without making additional strain and defects.

Recommended application field: Microelectronics

Technical characteristic: - Pressure substrates (wafers) to polishing - 0,01-0,10 N; - The speed of rotation of the polishing pad -5-60 / min; - The roughness of the substrate (wafer) after treatment - 0.03 microns; - Flatness of the plate in the 60 mm - 2-4 mm; - Damaged layer on the surface of the wafer after processing (in the embodiment BBHMP) - is absent.

Advantages over analogues: - Competitiveness of the technology is that it allows to obtain single-crystal plates that do not require further treatment, with no processing operations when making structural changes required flatness and roughness. - Technology can significantly reduce the allowance for processing, saving the material, increase several times yield blanks, cut costs of working hours, to produce thin (from tens of microns) plate plastic semiconductors without residual bending and hardening, forming deep and subtle defect-free cuts, which could be used for the manufacture of mesa structures.

The development stage readiness: Introduced in production

Description of the development:
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Etchant composition necessary for processing is supplied to polishing machine on which the cassette with the plates of the processed material. The machine has a control and monitoring system, which provides a change of pressure plates on the polishing pad, speed and kinematics tape samples, the polishing speed. The machine can be used for contactless nonabrasive chemical mechanical (BBHMP) and electrochemical polishing plates, which can be dissolved in liquid media. Changing equipment allows to use the machine for the operation of chemical-mechanical polishing and grinding plates. The abrasive version control system provides controlled workpiece little pressure on the polishing pad sample. The machine is tested for polishing wafers of semiconductor materials (InAs, InSb, CdHgTe, CdTe, HgTe, PbTe, GaAs, ZnSe, CdZnTe, Ge) and certain metals (Al, Cu, Zn, etc.). A principal feature of this technology is that all operations in the manufacturing of a product treatment zone of the semiconductor fed metered quantity special reactive liquid, which dissolves the active material to be treated and thereafter the reaction products are completely removed. Processing (cutting and polishing) is performed without contact with the product in a thin tool controlled layer etchant, thereby increasing the accuracy of the operations. Analogs are absent.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Licence's sale
Realization of finished commodity

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua