Purpose of the development: Investigation of the solid-state structure with monoatomic resolution microscopy. Obtaining of information about the behavior of a solid-state in the conditions of external action, including radiation.

Recommended application field: Different industries of national economy.

Advantages over analogues: For the first time it is now possible to detect a number of imperfections of a crystalline structure, which previously could be foretold only in theory. With the help the atom probe field ion microscopes (AP FIM) the radiation non-cascade mixing was studied, the dopes that captured interstice atoms were identified, and interstice-dope bond energies were defined. The new models of SPM allow to work inside the working chamber of the Tokamak-type facilities. For the first time in the world it became possible to observe of the surface of the working walls of a thermonuclear plant as they are being damaged by plasma. No analogs of the instruments are known.

The development stage readiness: Ready for application

Description of the development:
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Unique models of field ion microscopes and related instruments of atomic probes, and also new models of scanning probe microscope (SPM) with unique features have been created. Due to the unique technical features of the instruments alongside with basic researches an number of application tasks can be solved: development of light sources on the basis of field electron emission cathodes, development of a technique for manufacture of "silicon on insulator" structures by the method of implantation of hydrogen ions, strategies are being developed for express-analysis of a number of fluids for the content of biological matters, including, hazardous viruses. Patents of the Russian Federation have been obtained for the design of the microscopes and the methods of research

Possibility of transfer abroad:
Licence's sale
Combinated reduction to industrial level
Joint production, sale, exploitation

Photo

Country Russia

For additional information turn to:
E-mail: gal@uintei.kiev.ua