Purpose of the development: Designed for use in a wide aspect of electronics, for example, in areas such as telecommunications, internet, alternative energy sources.

Recommended application field: Nanotechnologies related to electronics and microelectronics, optical networks and systems, telecommunications, networks, non-traditional and alternative energy sources

Technical characteristic: To get porous InP layers has been chosen method of photoelectrochemical etching in an electrolyte based on HCl (5%). Also was elected regime of fixed current density, which was 150 mA/cm2. Etching time was 15 minutes. Served as the cathode - plate of platinum. The working surface of the samples 0.12 cm

Advantages over analogues: On the surface of porous p-InP is not formed an oxide layer also not observed the presence of elements belonging to the etchant. The pores are uniformly distributed over the surface of the crystal. The pore diameter indicates that the surface is created nanoporous. This result is a technologically important as it allows the use of such structures in various fields of technology and optoelectronics.

The development stage readiness: Pre-production model is made

Description of the development:
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This development has relates to methods for producing porous structures on the surface of single-crystal indium phosphide p-type, resulting in the surface of the porous layer is formed by InP. Processing of single crystal is performing by p-InP photoelectrochemical etching . Before etching, the samples were pre-treatment in order to get free from surface contamination. The samples were washed with toluene, methanol and isopropanol. To get porous InP layers has been chosen method of photoelectrochemical etching in an electrolyte based on HCl (5%). Also was elected regime of fixed current density, which was 150 mA/cm2. Etching time was 15 minutes. Served as the cathode - plate of platinum. The working surface of the samples 0.12 cm

Information about newness of the development:
there are Ukrainian patents -- 1 items

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Licence's sale
Technological document's sale
Combinated reduction to industrial level
Joint production, sale, exploitation

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua