Purpose of the development: The invention relates to capacitors manufacturing and can be used in various fields of nanoelectronics as functional blocks of RF capacitors and optically controlled delay lines incorporated into the architecture of 3D-nanostructures formed by the bottom-up principle. It has been an opportunity to use it as a quantum capacitor for high capacity non electrochemical energy storage at the molecular level.

Technical characteristic: The increase in density of capacity up to 22 times in comparison with known parameters and the simultaneous decrease in the tangent of dielectric loss angle to 20.7 times.

The development stage readiness: Pre-production model is made

Description of the development:
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The quantum capacitor includes GaSe semiconductor layered crystal structure with two current leads. This structure is intercalation extended in the direction perpendicular to the plane of the quantum letters where nanolayers of another phase are formed in expanded regions of Van der Waals forces. As another phase the organic semiconductor is used. Current leads are placed on two opposite faces, perpendicular to the crystallographic C axis.

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua