Purpose of the development: The developed technology allows to increase the lifetime of minority carriers of single crystals of the "solar" silicon due to deliberate doping.

Recommended application field: Processing of single crystals.

Technical characteristic: The technology provides: - Additional increase in the lifetime of minority carriers wafer "solar" silicon is 1.5-2 times in comparison with single crystals by heat treatment; - Improving the efficiency of "solar" batteries up to 21%.

Description of the development:
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Developed: - Methodology of physical and chemical model for the selection of effective alloying elements for semiconductor silicon, which takes into account the interaction energy of the silicon atoms in the crystal lattice; - Selection of temperature, heating rate, cooling process steps (diffusion of impurities, the generation and annealing) in order to prevent phase transformations in silicon, the formation of defect structure and the degradation of electrical properties; - Modes of heat treatment of single crystals and wafers doped silicon based temperature phase transitions.

Possibility of transfer abroad:
Licence's sale

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua