Purpose of the development: Basic element for high speed switch devices in microelectronics

Recommended application field: Industry on Microelectronics

Technical characteristic: Optimal ratio of the thickness of the ferromagnetic to the superconducting layer leads to decreasing of the Joule heat among layers and to increase of the efficiency and sensibility of device.

Advantages over analogues: Reduction of the power consumption of the spin valve

The development stage readiness: Finishing off is required

Description of the development:
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The superconductor spin valve consists of the Si substrate, on which are consistently deposited the film of the superconducting material (Ni), the ferromagnetic management layer (Cu-Ni) and the protective layer.

Information about newness of the development:
there are inventor's certificate -- 1 items

corresponds technical description
Reguires revision

Possibility of transfer abroad:
Licence's sale
Joint production, sale, exploitation

Photo

Country Moldova

For additional information turn to:
E-mail: gal@uintei.kiev.ua