Purpose of the development: The invention relates to capacitors manufacturing and can be used in various fields of nanoelectronics as functional blocks of RF capacitors and optically controlled delay lines incorporated into the architecture of 3D-nanostructures formed by the bottom-up principle.It has been an opportunity to use it as quantum capacitor for high capacity non electrochemical energy storage at the molecular level.

Technical characteristic: The quantum capacitor includes GaSe semiconductor layered crystal structure with two current leads. This structure is intercalation extendedin the direction perpendicular tu the plane of the quantum letters where nanolayers of another phase are formed in expanded regions of Van der Waals forces. As another phase the organic semiconductor is used. Current leads are placed on two opposite faces, perpendicular to the crystallographic C axis. COMPARACTIVE CHARACTERISTICS OF PROPOSED QUANTUM CAPACITOR AND ANALOQUE PARAMETERS ANALOGUE QUANTUM CAPACITOR -- specific capacity, mF/sm[3](for frequency of 347,4 rHz) 43 984 -- Tg (for frequency of 347,4 rHz) 0.29 0.014 -- Effective inductance, Hn/sm[2] is't visual. 1,5*10[5] -- Change in capacity under illumination with white light is't detected 318 -- Change Tg capacity under illumination with white light is't detected 0,026

Advantages over analogues: The increase in density of capacity up to 22 times in comparison with known parameters and the simultaneos decrease in the tangent of dielectric loss angle tg to 20,7 times.

The development stage readiness: The working documentation is developed

Certif Q

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Licence's sale
Technological document's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua