Purpose of the development: The process plant epitaxial growth of Discovery D-180 LDM. The unit is designed to create a hetero-epitaxial semiconductor structures, including quantum-, GaAs-based materials by chemical vapor deposition of organometallic compounds (method MOCVD) for micro-optoelectronic devices. The process plant epitaxial growth of D-180GaN MOCVD System. The unit is designed to create a hetero-epitaxial semiconductor structures based on GaN material by vapor-phase epitaxy of organometallic compounds (method MOCVD) for micro-optoelectronic devices. The process plant epitaxial growth of m-GaNzilla MOCVD System (modification E300). The unit is designed for the manufacture of semiconductor heteroepitaxial structures on GaN-based materials by chemical vapor deposition of organometallic compounds (method MOCVD) for micro-optoelectronic devices.

Recommended application field: Micro-optoelectronics.

Advantages over analogues: The process plant epitaxial growth of Discovery D-180 LDM - in Ukraine there is no analogue of such a facility. Its ability to provide the user the status of the leading institutions in the field of semiconductor material. The process plant epitaxial growth of m-GaNzilla MOCVD System (modification E300) for maximum production, maintaining the exceptional uniformity of thickness, doping, and composition in the grown epitaxial layers. The reactor was designed for the deposition of high-quality InGaN, AlGaN, and GAN and optimized for rapid growth.

The development stage readiness: Ready for application

Technical and economic effect: Material and technical base of concern "Science" allows you to organize the production of competitive and high-tech products patentability: - High power LED white light spectrum using GaN and solid solutions based on it; - Devices of microwave electronics, power electronics and optoelectronics using GaN and solid solutions based on it; - Concentrated solar cells based on tandem heterostructures.

Description of the development:
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The process plant epitaxial growth of D-180GaN MOCVD System. Diagnostic equipment consisting of: 1. Photoluminescence mapping system substrates Philips (Nanometrics) PLM-series. Intended for rapid, non-destructive mapping structure semiconductor substrate at room temperature using techniques photoluminescence (PL). The system can scan a substrate diameter of 150mm and a thickness of 1 mm with a resolution of 0.1 mm and a maximum rate of 2,000 points per second for the total luminescence intensity. 2. Hall effect measurement system HMS3000. A complete system for identifying the key electrical properties of semiconductor material (resistivity, carrier concentration, p / n type and mobility of charge), including a multilayer structure. The system uses advanced software for data processing with an additional module measuring current-voltage characteristics. The system can be used to describe a variety of materials, including silicon, gallium arsenide, indium phosphide, gallium nitride, various semiconductor structure, the layers of metal oxide at room temperature and 77 K (liquid nitrogen temperature). 3. Electrochemical profiler Accent PN4300PC. Controlled electrochemical RS CV profilometer, which measures the concentration of electrically active dopant versus depth in semiconductor structures. It's comfortable, and often the only way to evaluate the performance of the plates in front of an expensive and time-consuming production process.

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Licence's sale
Technological document's sale
Creation of joint enterprise
Realization of finished commodity

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua