Purpose of the development: The method of lateral epitaxy redkofazovoi intended for use in solar panels to reduce their costs.?

Recommended application field: Solar energy.

Advantages over analogues: Advantages: saving costly raw materials and reducing implementation time found the conditions of crystallization of the material in its production, and most importantly - the technology opens the possibility of purposeful management process of formation of the panel structure of the specified parameters. Novelty: this way of solving this problem is proposed for implementation in Ukraine for the first time.

The development stage readiness: The working documentation is developed

Description of the development:
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The project relates to the field of modern semiconductor materials , namely, the development of elements of modern high-precision technology of epitaxial silicon layers for low-cost elements of the solar energy. Brief description: An important deterrent to the development of modern solar energy should be considered as a high cost of its main components - silicon cells . One of the most promising ways to solve this problem is to use the lateral redkofazovoy epitaxy . It is by this method can grow high-quality silicon layers with high crystallographic properties. At present, search the growth conditions of these layers is empirically. It is time- consuming and expensive . At the same time, serves to solve the problem with theoretical thermodynamic methods of analysis and simulation of the multivariable process . Thermodynamic analysis , it is proposed to implement , will develop a computational computer program that will quickly and with a high probability to predict the conditions of crystallization of the material with the desired properties. The work is in the development stage of the theoretical models of phase equilibria and mass transfer in the liquid phase. Developed software solutions formulated tasks . Period: 2 years from the start of funding. The total cost of the project: 180 thous.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Licence's sale
Technological document's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua