Purpose of the development: Thermodynamics of growing strained heterostructures based on solid solutions ZnCdTe intended for use in X-ray detection devices and the soft component of ionizing radiation.

Recommended application field: Instrument. Development relates to the field of modern semiconductor materials, namely, to develop elements of a modern high-precision, high-precision technology of heterostructures for devices based on solid solutions of compounds A2B6.

Advantages over analogues: Patenting, competitive results, compared with global peers: Thermodynamic and computer modeling process of growing semiconductor layers in the system for the first time. Therefore, this method of solving the problem will be competitive and patentable. This method of solving this problem is proposed for implementation in Ukraine for the first time.

The development stage readiness: Ready for application

Technical and economic effect: The economic attractiveness of development for market promotion , application and realization, parameters, price : Proposed computing programs will quickly and with a high probability to predict crystallization conditions of solid solutions with the desired properties. This will result in savings of expensive raw materials and reduce implementation time of crystallization conditions found material in its production , and most importantly - opens the possibility of purposeful process control formation of the given parameters of the outline pane . This approach to finding useful layer growth mode from an economic point of view and from the point of view of scientific understanding of the problem .

Description of the development:
()
The project proposed to perform the thermodynamic analysis of the process of growing solid solutions ZnCdeTe on substrates of CdTe. Film of the material thickness of several microns can be active medium , which reacts to the presence of X-rays and the soft component of ionizing radiation . State of readiness of development : developed thermodynamic concepts , describing the process of growing layers of solid solutions ZnCdTe from the liquid phase . Developed software for solving the problem and obtained preliminary results. This part of the work published in the leading journals of the Russian Academy of Sciences and Ukrainian . Implementation Results : Preliminary results are applied in selecting the conditions for obtaining epitaxial layers ZnCdTe at the Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (Kiev) .

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Technological document's sale

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua