Purpose of the development: For use in electronic materials science and manufacturing technology materials and structures (including nanostructures) based on silicon-germanium semiconductors.

Recommended application field: Electronics.

Technical characteristic:

Advantages over analogues: This method is characterized by a higher spatial resolution determined by focusing the exciting laser radiation. When using a microscope objective spatial resolution of ~ 1 micron.

The development stage readiness: Ready for application

Description of the development:
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The method is based on detection of spectra of Raman scattering light from the structures formed on the basis of a solid solution of Ge [x] Si [1-x], and then analyzing the intensities and frequencies received by the bands corresponding to the vibrations of atoms Ge-Ge, Ge-Si, Si-Si.

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Technological document's sale
Creation of joint enterprise

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua