Purpose of the development: Heavy doping thin surface region of the semiconductor, creating inversion layer and the formation of a sharp pn junction.

Recommended application field: Electronics. Radio engineering. Engineering.

The development stage readiness: Ready for application

Description of the development:
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Surface laser alloying method consists of irradiating the crystal Cd (Zn) Te pre-deposited film alloying element short laser pulses. Featuring ultra-fast melting and crystallization processes, actions and elastic shock waves formed by a thin (d = 40-60 nm), heavily doped (N approximately 10 [19] cc) layer and a sharp pn junction.

Information about newness of the development:

ноу-хау--
1 шт.

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Technological document's sale
Creation of joint enterprise

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua