Purpose of the development: Technology allows highly efficient light-emitting structures on large area substrates with a given spectral composition of radiation (from 560Nm to 950 nm).

Recommended application field: Silicon photonics, in particular for the creation of silicon LED display emissive structures, the optical amplification and laser.

The development stage readiness: Ready for application

Description of the development:
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Developed technology of light-emitting structures based on silicon nanocrystals in a porous oxide matrix with controlled nanocrystals. The technology is patented, the patent of Ukraine № 75793 for the invention "Method of light-emitting material based on silicon", publ. in the bulletin. "Industrial Property", № 5 dated 15.05.2006.

Information about newness of the development:
there are Ukrainian patents -- 1 items

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Technological document's sale

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua