Purpose of the development: Photodetector is designed for light detection in communication systems, monitoring and protection of the environment, automation.

Recommended application field: Development can be realized as part of industrial equipment optoelectronic devices at enterprises of the State Committee on Industrial Policy of Ukraine, the State Committee of Ukraine and private industry.

Technical characteristic: 1. Offset longwave sensitivity threshold,% 50. 2. Power consumption mW max: 20. 3. The basic error,% max: 0.5. 4. Overall dimensions: 0.5 * 0.5 * 1.0.

Advantages over analogues: Analysis made on the basis of patent search shows that the essential features of technical solutions detector has several advantages over similar products. In particular, laser processing of metal-semiconductor contact at the manufacturing stage has allowed more than five-fold increase in sensitivity relative to the shift long-wavelength edge of the photosensitivity under the influence of anisotropic pressure.

The development stage readiness: Tested experimental exploitation order

Technical and economic effect: Economic attractiveness of the photodetector based on the use of common group microelectronics technology, low labor intensity. The estimated cost of a single item in serial production of 1000 units per year is $ 10, which is significantly less than peers.

Description of the development:
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Photocell sensor is based on surface-barrier structure (contact metal - semiconductor). The essence of development is to ensure that exposing photodetector anisotropic pressure can effectively shift its long-wavelength edge of the sensitivity due to the structure of laser processing step fabrication technology.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Licence's sale
Technological document's sale
Combinated reduction to industrial level
Joint production, sale, exploitation

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua