Purpose of the development: Aim is to develop an uncooled infrared radiation sources within the spectral range 3-12 microns based on Si, that enable the use of high technology for the manufacture of silicon sources of infrared radiation.

Recommended application field: Intended use of LEDs: panel recovery and processing of information in the IR spectrum, the means testing of thermal imaging cameras, infrared radiation standards, instruments of environmental monitoring, biomedical sensors, etc.

Technical characteristic: In the process, will be made one experimental samples and multielement sources of infrared radiation with the following parameters: 1. Spectral range 3-12 microns ............ 2. Output power, mW / sq cm. ....................... up to 103 3. Speed of action, ms ................... 50-500 4. Operating temperature, C .................... 50-150 5. dimensions emitted section, mm. X0 ............................ 0.3 3 - 2.5 x 2 5 To study the parameters of the devices is planned to create a stand for radiation and the development of programs and methods of testing.

The development stage readiness: Tested experimental exploitation order

Description of the development:
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The principle of operation developed sources based on the effect of the concentration modulation of thermal radiation in semiconductor injection of charge carriers in optically thin base svetodioda.Tehnologiya manufacturing active elements sources will be developed on the basis of single-crystal Si. Of particular importance is holding difuzii acceptor and donor additives to create Si p *-nn * - structures. It should be high quality impurity - difuzantov , tooling, gaseous atmosphere in which to conduct difuziya . In addition , it is planned to use geterirovaniya silicon crystal by using the properties of the acceptor and donor impurities are deposited on the silicon surface with the selection of the desired concentration. Increasing t can also be achieved by choosing the time-temperature regime during difuzionnogo process. When using or nanocrystalline porous silicon technology LED IR radiation due to optimum drainage light output with the object of monocrystalline silicon , reducing the rate of recombination at the surface and in the bulk , the optical characteristics of optimal regulation will be increased power developed LEDs. Magnetron sputtering method is a simple technology that can be precipitated at a relatively high speed and low temperature nanocrystalline silicon films . Another method of preparation of nanocrystalline silicon films is the formation of nanocrystals in an amorphous film when exposed to certain external factors : dropout , laser irradiation , ion implantation of silicon.

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Licence's sale
Combinated reduction to industrial level
Creation of joint enterprise

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua