Purpose of the development: High-current electric discharges in pairs of tin can be used to create a powerful source for extreme ultraviolet lithography.

Recommended application field: The results can be implemented in the academic institutions of the physical and technical profile, as well as directly with the companies producing modern high-tech products.

Technical characteristic: In this paper we investigate the dynamics and direction of the radiation in the wavelength range 12,2-15,8 nm from the anode plasma high current pulsed plasma diode. Current between the tin-plated electrodes excited discharge capacitor bank 0.5-2.0 uF at a pressure of 2 • 10-6 Torr. (The length of the discharge gap - 5 cm diameter cathode - 1 cm anode - 0.25 cm, discharge voltage - 4-15 kV, current amplitude - 5-50 kA, the current density at the anode - to 5.0 MA / cm 2, period of the current oscillations - 2.4 ms.)

Advantages over analogues: The authors are not known analogs that its parameters would correspond to the developed source.

The development stage readiness: Finishing off is required

Technical and economic effect: The cost of the source does not exceed the cost of the standard devices.

Description of the development:
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The study used pre-filling of the discharge gap of the primary plasma due to surface breakdown at the cathode. The radiation was detected both along and across categories: wide range - with the help of collectors in the wavelength range 12,2-15,8 nm (dedicated band) - via AXUV-type sensors 20. Due to the effect of the radiation that is generated, developed source can be very promising for further experimental studies aimed at improving its design and an increase in power up to the values that are put forward for modern nanolithography. Source works with standard power supplies, which are manufactured by industry.

Information about newness of the development:

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1 шт.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Licence's sale
Licence's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua