Purpose of the development: The development is designed for integrated monitoring of geometrical parameters of nano-, microelectronic and other devices in their manufacture. It allows you to get an image of the internal structure of objects produced and automatically measure their geometric parameters.

Recommended application field: Medical institutions, observatories, organizations and enterprises of the Ministry of Industrial Policy of Ukraine, the industrial enterprises of private ownership.

Technical characteristic: Hard raster size photo sensitive surface - 5x5 square centimeter; spectral sensitivity region - 400-750 nm; maximum sensitivity - 0.000001 lx in the optical and X-ray bands in 1mRn, internal amplification factor - not less than 1000; distribution capacity - 3 microns.

Advantages over analogues: Specifications Image Sensor based on imperfect memory heterojunctions (including scanning means) are unique among domestic and foreign equipment.

The development stage readiness: Pre-production model is made

Technical and economic effect: Image sensor based on non-ideal heterojunction for use in the practice of X-ray medical research eliminates the need for expensive X-ray photographs, which can give a significant economic effect.

Description of the development:
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The new information and communication sensor NDT nano, microelectronic and other devices based on the original non-ideal heterojunction. In preliminary studies have shown that the proposed image sensor may scan circuitry, which provides a rigid raster images, and enables the transmission of moving images. Low dose radiation sensor makes use of a safe. The samples were tested as part of the sensor equipment astronomical observatory on the equipment of the Institute of Dentistry and private enterprises "Reafarm."

Information about newness of the development:

ноу-хау--
1 шт.

Possibility of transfer abroad:
Technological document's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua