Purpose of the development: The proposed non-invasive method used to determine the parameters of the recombination of charge carriers, such as the rate of surface recombination lifetime and diffusion length of carriers in semiconductors (n / n) with the conclusion of the test results to external devices in the form of protocols.

Recommended application field: The method is used in the manufacture of microelectronics and performance optimization p / n devices.

Advantages over analogues: The proposed method of measuring parameters of recombination in semiconductors, unlike analog enables contactless XRF control a broad spectrum of semiconductor samples in a wide temperature range, which does not require complex and expensive equipment for positioning and probing with computer control.

The development stage readiness: Ready for application

Description of the development:
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The method is based on measurement of non-equilibrium thermal radiation of free charge carriers in the p / p (hn2 Eg). This method makes it possible to implement contactless nondestructive express control of a wide range of semiconductor samples. The effectiveness of the method does not depend on the nature of the dominant recombination mechanism (radiative, nonradiative), allowing you to explore the recombination parameters as in straight and in indirect p / p. The effectiveness of the method increases with temperature. This greatly simplifies the implementation of the method and enables contactless nondestructive testing a wide range of recombination parameters p / p over a wide temperature range (300-800 K). On the basis of this method has been developed technology for nondestructive monitoring parameters Si material and devices on the main stages of the production of solar cells (JSC "Quasar").

Information about newness of the development:
there are Ukrainian patents -- 1 items

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Licence's sale
Technological document's sale

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Country Ukraine

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E-mail: gal@uintei.kiev.ua