Purpose of the development: Developed detectors designed to register weak ultraviolet radiation (UVR) on the background of a strong visible and infrared radiation.

Recommended application field: Ultraviolet photoelectronics, in particular for the needs of: Medicine - physiotherapy, monitoring human exposure to solar radiation; Biotechnology - synthesis of vitamins D2 and D3; Materials - Determination of the composition of substances and the electronic structure of elements; Ecology - the problem of the ozone hole, the definition of pollution.

Technical characteristic: The photosensitivity of Ni / ZnO: N / Al detectors UFI - 0.1 A / W at a wavelength of 365 nm UV radiation. Performance - 100 ms.

Advantages over analogues: Values Achieved developers photosensitivity and speed Ni / ZnO: N / Al detectors UVI meet the same specifications largest industrial detectors based on Si, GaN and SiC. Compared with GaN, zinc oxide is characterized by lower temperatures and more simple process of film deposition. Accordingly, this material has a lower cost. It should also be noted that the process material is ZnO, because there are many methods for its deposition.

The development stage readiness: The working documentation is developed

Description of the development:
()
Create ultraviolet detectors based on nanostructured ZnO films is of considerable interest because of the prevalence of Zn and O2 in nature, simple and cheap technology of its receipt - magnetron sputtering, non-toxicity of the material to the environment - non-toxic technology of its receipt. Also, semiconductor detectors are high efficiency, low weight and size, the ability to integrate the signal which is detected.

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Licence's sale
Technological document's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua