SEMICONDUCTOR GAMMA DETECTORS
Purpose of the development:
Разработаны и получены полупроводниковые детекторы на основе кристаллов CZT, которые обеспечивают прямое преобразование энергии излучения в электрический сигнал.
Recommended application field:
Crystals Cd (1-x) ZnhTe (CZT) (x = 0,1) - effective material for registration of ionizing (mainly gamma) radiation at solving the problems of radiation monitoring, medical imaging, monitoring of radioactive contamination of the environment, as well as use space technology and astronomy.
Technical characteristic:
Displacement: 0,001 cc ... 1
The energy range of the detected gamma radiation: 5 keV ... 1.5 MeV.
The dynamic range of exposure dose of 10 mR / h ... 1 R / h.
Energy resolution for 137Cs: <6%.
Energy resolution for 241Am: <10%.
The detection efficiency at 60 keV (2 mm thickness detector): 99.27%.
Operating temperature range: -40 ... +50 ° C.
The bias voltage: 10 ... 1000 VA
The electrical resistivity of 1 * 10 10 1 * degree ... 11stepeni 10 ohm cm.
Maximum dimensions: 10x10x10 cubic mm
The type and material of contacts: planar, Au or In.
Advantages over analogues:
Detectors designed compact (<1 cc) and successfully operate at room temperatures without requiring cooling by liquid nitrogen, unlike germanium detectors, but they have an energy resolution gamma spectrometry, close to them.
The development stage readiness:
Ready for application
Description of the development:
() Fabricating a semiconductor based detectors crystals Cd (1-x) ZnhTe (x = 0.1) provides a direct conversion of radiant energy into an electrical signal. The use of special techniques in collecting and processing the charge output allows to achieve energy resolution gamma spectrometry, close to the germanium detectors.
corresponds technical description
Ready for implementation
Possibility of transfer abroad:
Technological document's sale Realization of finished commodity
Photo
Country
Ukraine
For additional information turn to: E-mail: gal@uintei.kiev.ua
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