Purpose of the development: The method of horizontal directional solidification (STC) allows to grow sapphire any crystallographic orientation in plates record size (350x500x40 mm3), inaccessible other growth methods.

Recommended application field: Growing of sapphire crystals.

Advantages over analogues: STC method has a number of advantages over other methods of melt: - It is possible to grow sapphire crystals in the form of plates of such sizes that are not available to other methods; - It is a highly effective method to obtain crystals of optical quality (1, 2 and 3 categories); - Makes it possible to use the available materials to create a temperature field and the manufacture of containers of different geometric shapes; - Seeding and crystallization process can be monitored visually or by optical devices; - Thanks to a large area of ??the melt is effectively the evaporation of impurities (grown crystals have high chemical purity of 99.996%); - Allows you to grow single crystals with low (<2 kg / mm2) residual stresses, which makes it possible in some cases to exclude a special technical joke.

The development stage readiness: Introduced in production

Description of the development:
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The advanced technology of growing sapphire crystals by STC in protective gas atmospheres, having a number of advantages over the prior art vacuum technology (Bagdasarov method). Advanced technology has also been successfully used for growing laser crystals Ti: sapphire and scintillation crystals of rare earth aluminum garnet (LuAG: Pr, LuAG: Ce, YAG: Ce). Enhanced growth and annealing allow adjustment to get the UV-resistant material.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Technological document's sale
Creation of joint enterprise
Realization of finished commodity

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua