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TRANSFER OF INNOVATIONAL TECHNOLOGIES

CZOCHRALSKI METHOD


Purpose of the development: The method of growing single crystals by the Czochralski method of high acoustic ultrasonic field that allows you to actively influence the hydrodynamics and gas content of the melt. Czochralski grown scintillator single heavy oxides CdWO4, PbWO4, PbMO4 and Ti: sapphire laser technology.

Recommended application field: Fabrication of active laser elements.

Advantages over analogues: Czochralski method has several advantages compared with other crystallization methods: - High level of automation of the process of crystallization allows the crystallization process with minimal operator; - The possibility of obtaining single crystals of a given crystallographic orientation, with small deviations from this growth axis direction; - The presence of high temperature gradients in the melt at the crystallization front, providing conditions for the stability of a smooth crystallization front; - The ease of obtaining single crystals of sufficient diameter to 50 mm, with high optical and structural quality, which allows their use for the manufacture of active laser elements; - The use of gaseous media crystallization of different redox chemical potential allows to grow single crystals of different chemical and stoichiometric composition; - Crystal growth from the melt occurs without contact with the walls of the crucible, which makes it possible to easily change the geometric parameters of the growing crystal and visually monitor its growth; - The method allows you to define the geometric shape of the growing crystal by varying the temperature of the melt and drawing speed; - Thermal units Czochralski method is simple, reliable, low cost and efficiency of the operation.

The development stage readiness: Introduced in production

Description of the development:
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Czochralski method - one of the most popular and widely used industrial methods for growing single crystals of semiconductor and dielectric materials and synthetic crystal gemstones. Technological features of the process are determined by the requirements for geometric parameters, structure, morphology and physico-chemical properties of single crystals. On the basis of the Czochralski method developed systems fully automate the process of growing single crystals. The main element of the modern automated systems - the weight sensor with a high sensitivity, accuracy and reliability. This allows a process of growing continuously monitor the weight of the growing crystal, its dimensions and process parameters of the crystallization process.

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Creation of joint enterprise
Realization of finished commodity

Photo

Country Ukraine

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E-mail: gal@uintei.kiev.ua

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