Purpose of the development: Bridgman method under high pressure inert gas makes it possible to grow single crystals of substances with increased volatility melt components, what are the compounds of group A2B6.

Recommended application field: Growing high-quality single crystals of the group A2B6.

Technical characteristic: The growth of high-pressure setting: the maximum diameter of the growing crystal, mm: 50; the height of the crystal boule, mm: 100 ... 150; operating pressure inert gas atmospheres: 1 ... 150; maximum temperature in the crystallization zone, ° C: 1900; the amount of controlled heating zones: 3; temperature gradient at the crystallization front, ° C / cm, 5 ... 50; moving speed of the crucible during the crystallization, mm / h: 0.15 ... 15.

Advantages over analogues: Application of plant design two independent heaters significantly improved crystallinity and purity of the crystals due to alignment of the solidification front as well as significantly improve the yield of material. The main advantage of the method is its simplicity Bridgman.

The development stage readiness: tested in laboratory condition

Description of the development:
()
Developer of a number of technological challenges, the key for growing high-quality single crystals by the Bridgman group A2B6, such as ZnSe and CdZnTe (CZT). Among these problems, primarily refers manufacture a new design of the thermal unit growth setup for optimum growth conditions. Complex studies of the characteristics of the materials obtained, the results of which are used for optimization of the growth equipment and technology of growing single crystals. Improvement Stockbarger associated with the introduction of a special thermal crystallization zone of the diaphragm, will increase the value of the axial temperature gradient in a few times, which contributes to the cultivation of high-quality single crystals. Created technological systems for growing Bridgman crystals of group A2B6: Cd (1-X) ZnXTe, ZnSe, ZnS, ZnTe, CdTe, CdSe, ZnSe: Cr, Zn (1-X) MgXSe, (Zn (1-X) MgXSe) : Cr.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Technological document's sale
Combinated reduction to industrial level
Creation of joint enterprise

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua