Purpose of the development: Radiation technology (RT) is a collection of additional process steps that are integrated into an existing manufacturing silicon discrete devices (transistors, diodes, sensors, optoelectronic devices, etc.) and all types of integrated circuits (LSI, VLSI, memory circuits, etc. .)

Recommended application field: Production of silicon devices of various types.

Advantages over analogues: - RT is used as additional operations radiation (gamma rays or fast electrons) and heat treatment on the intermediate and final stages of device fabrication. No changes to the basic process steps of manufacturing equipment is not required to make. - The use of RT to control the timing of silicon devices compared to conventional doping additional impurities gives a much more stable and manageable results. - Allows you to affect the semiconductor structure after the completion of the technological cycle of production. - Simplifies the conduct of research in the development phase of new products to determine the optimal values ??of the electrical parameters of the structures and electrical parameters of devices.

The development stage readiness: Ready for application

Technical and economic effect: The economic effect of reducing defects in the manufacture of electronic devices based on silicon and on improving their performance through the use of RT allows you to quickly recoup the cost of its production.

Description of the development:
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RT based on the ability of ionizing radiation affect the electrical parameters of the semiconductor-insulator semiconductor structures, to create crystal defects in the silicon substrate, change the charge characteristics of the dielectric layers. The essence consists in RT irradiation and heat treatment under certain conditions, device structures on silicon wafers at intermediate and final stages of the device fabrication. Positive effects reach using RT: 1. The increase in the operating temperature range of MOS devices. 2. The increase in yield in the manufacture of devices by reducing the spread of the electrical parameters of the structures on the area of ??the silicon substrate (wafer). 3. Increased speed and improved frequency characteristics of discrete semiconductor devices and integrated circuits. 4. Reject potentially reliable MOS devices. 5. Management of the static gain of bipolar transistors. 6. Reduced sensitivity MOS devices to the effects of ionizing radiation. 7. Reducing the density of surface states at the interface between the silicon-insulator transition. 8. Management of the threshold voltage of MOS transistors. 9. Radiation erase the memory of programmable chips. 10. Increase product yield due to optimization of the electrical parameters device structures.

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua