Recommended application field: Production of Cd, Zn and Te having purity higher than 99.9999 % for synthesis of semiconducting compounds and generation of heterostructures to be applied in the fields of: - microelectronics: ionizing radiation sensors (CdTe, CdZnTe); - optoelectronics : scintillation sensors (Zn,Cd)WO4, (Zn,Cd)MoO4, infrared-range photodetectors (CdHgTe).

Technical characteristic: - Mass of original material charge - 2.5 kg; - product yield percent - 90 % of original charge; - unit capacity - 300…400 g/hour; - heater power - 1.0 kW; - total power - up to 3 kW; - dimensions of unit, including heater and shields: height - 450 mm; diameter - 240 mm; weight - 5 kg.

Advantages over analogues: - High effectiveness of purification (from 99.9…99.99 % to > 99.9999 %); - higher yield of end product (90 % of original charge).

The development stage readiness: Introduced in production

Description of the development:
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Using the source Cd, Zn and Te technically-pure (99.9…99.99 %) elements, the high-capacity unit allows to produce high-yield end products with their purity being higher than 99.9999 %. Operation of the Cd, Zn and Te deep purification unit is based on the principle of material vacuum distillation refining. The unit provides for stage-by-stage removal of high-volatility impurities, involving the filtration process, and removal of low-volatility impurities, involving the use of a getter filter, which ensures a deeper purification of cadmium, zinc and tellurium to remove metal impurities, including interstitial impurities (N, O, C) and reduce their content down to 2…5·10 -5 degree mass %.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Realization of finished commodity

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua