Declared technologies base

TRANSFER OF INNOVATIONAL TECHNOLOGIES

Ga, In and Pb DEEP PURIFICATION UNIT


Recommended application field: Production of Ga, In and Pb having purity higher than 99.9999 % for synthesis of semiconducting compounds and generation of heterostructures to be applied in the fields of: - microelectronics : integrated circuits (GaAs); - optoelectronics : scintillation sensors PbWO4, PbMoO4 for identification of double beta-decay and dark matter particles; - microwave electronics materials (GaAs, GaN, InP, InAs, InSb, GaAlAs/GaAs, AlGaN/GaN, InGaAs/InP, etc.)

Technical characteristic: - Mass of original material charge : 2.3 kg; - unit capacity : 300…400 g/hour; - product yield percent : 90 % of original charge; - dimensions of unit, including heater and shields: height - 350 mm; diameter - 200 mm; weight - 4 kg; - crucible and condenser material : graphite of grade МПГ-7; heater and shields material : graphite of grade МГ-1 ОСЧ 7-3, ТУ 48-20-9082; - operating temperature : 950…1350°С; - crucible and condenser temperature control : thermocouples ВР-5/20; - vacuum under cold and hot conditions : 1.33 ·10-3 Pa; - the unit is based on standard furnace units of type СЗВН-0,55.4,5/14-И1.

Advantages over analogues: - High effectiveness of purification (from 99.9…99.99 % to > 99.9999 %); - higher yield of end product (90 % of original charge); - high capacity (300…400 g/hour).

The development stage readiness: Introduced in production

Description of the development:
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Using the source Ga, In and Pb technically-pure (99.9…99.99 %) elements, the high-capacity unit allows to produce high-yield end products with their purity being higher than 99.9999 %. Operation of the Ga, In and Pb deep purification unit is based on the principle of material vacuum distillation refining. The unit provides for simultaneous removal of low-volatility impurities by the method of base metal evaporation from the crucible and removal of high-volatility impurities by the method of holding condensate under high-temperature conditions in the process of purification, which ensures a deeper purification of gallium, indium and lead to remove metal impurities and a higher efficiency of the refining process.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Realization of finished commodity

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua

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