Ga, In and Pb DEEP PURIFICATION UNIT
Recommended application field:
Production of Ga, In and Pb having purity higher than 99.9999 % for synthesis of semiconducting compounds and generation of heterostructures to be applied in the fields of:
- microelectronics : integrated circuits (GaAs);
- optoelectronics : scintillation sensors PbWO4, PbMoO4 for identification of double beta-decay and dark matter particles;
- microwave electronics materials (GaAs, GaN, InP, InAs, InSb, GaAlAs/GaAs, AlGaN/GaN, InGaAs/InP, etc.)
Technical characteristic:
- Mass of original material charge : 2.3 kg;
- unit capacity : 300…400 g/hour;
- product yield percent : 90 % of original charge;
- dimensions of unit, including heater and shields:
height - 350 mm;
diameter - 200 mm;
weight - 4 kg;
- crucible and condenser material : graphite of grade МПГ-7; heater and shields material : graphite of grade МГ-1 ОСЧ 7-3, ТУ 48-20-9082;
- operating temperature : 950…1350°С;
- crucible and condenser temperature control : thermocouples ВР-5/20;
- vacuum under cold and hot conditions : 1.33 ·10-3 Pa;
- the unit is based on standard furnace units of type СЗВН-0,55.4,5/14-И1.
Advantages over analogues:
- High effectiveness of purification (from 99.9…99.99 % to > 99.9999 %);
- higher yield of end product (90 % of original charge);
- high capacity (300…400 g/hour).
The development stage readiness:
Introduced in production
Description of the development:
() Using the source Ga, In and Pb technically-pure (99.9…99.99 %) elements, the high-capacity unit allows to produce high-yield end products with their purity being higher than 99.9999 %. Operation of the Ga, In and Pb deep purification unit is based on the principle of material vacuum distillation refining. The unit provides for simultaneous removal of low-volatility impurities by the method of base metal evaporation from the crucible and removal of high-volatility impurities by the method of holding condensate under high-temperature conditions in the process of purification, which ensures a deeper purification of gallium, indium and lead to remove metal impurities and a higher efficiency of the refining process.
corresponds technical description
Conforms to technical characteristic
Possibility of transfer abroad:
Realization of finished commodity
Photo
Country
Ukraine
For additional information turn to: E-mail: gal@uintei.kiev.ua
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