Purpose of the development: Designed for connection of standard coax circuits of measuring devices to the pads of GaAs FETs.

Recommended application field: In scientific research in the study of the parameters of low-noise and low-power transistors in a temperature range of 80 - 350 K.

Technical characteristic: Technical characteristics: - The frequency range GHz - 0.1-12; - Insertion loss rabechey band of 10%, not more, dB - 0.4; - Decoupling signal path between the input and output, however, db - 25; - VSWR Input / Output in the operating band of 10%, not more units. - 1.3.

The development stage readiness: Introduced in production

Description of the development:
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Measuring device made based on microstrip lines deposited on the alumina ceramics. At the ends of the microstrip lines are fixed signal microprobes (contact needles) of beryllium bronze. Earthworks (SOURCE) microprobes are mounted directly onto the ledge in the housing separating the entrance test of the transistor. Inductance of 0.3 nH microprobes. Dimensions pads transistors at least 80x80 mm. Use local cooling of the test transistor vapor-liquid nitrogen stream which is supplied directly to the transistor. Changing the degree of cooling of the test transistor is performed by changing the flow of nitrogen supplied to the sample.

corresponds technical description
Conforms to technical characteristic

Possibility of transfer abroad:
Licence's sale

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua