Purpose of the development: The method is intended for industrial use in the manufacture of light-emitting devices with quantum wells based on A2B6 compounds with molecular beam epitaxy.

Recommended application field: In industry, the manufacture of light-emitting devices.

Advantages over analogues: For the first time suggested the introduction of a thin layer of elastic stresses in the quantum well based on A2B6 compounds for improving its luminescent characteristics.

The development stage readiness: tested in laboratory condition

Description of the development:
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The method consists in elastically strained quantum well structure modification on the basis of the triple A2B6 compounds by introducing into the middle of the quantum well, in the process of cultivation, a thin layer of a binary compound A2B6. This layer has a lattice constant that its introduction would significantly increase the energy of elastic strain in the quantum well. Thus there is a partial relaxation of them by reallocating the components of the material of the quantum well, a thin barrier and insert. This leads to the fact that fluctuations of the quantum well structure become more homogeneous solution, namely the number of small increases and decreases the amount of fluctuation deep. As a result, the intensity increases and the half width decreases Low temperature photoluminescence quantum wells strip.

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua