Purpose of the development: The method is intended for industrial use in the manufacture of photodetectors and light-emitting devices.

Recommended application field: In the industry (in the manufacture of light emitting devices and photodetectors).

Technical characteristic: - the electric field Ed - 50-100 V / cm; - Td temperature - 300-4000s; - time - a few tens of minutes td.

Advantages over analogues: The advantage of the proposed method is that the application of an electric field greatly accelerates the process of doping and cleaning, which can significantly reduce its temperature and to avoid the creation of their own defects. The method also makes it possible to determine the parameters of diffusion of impurities in different crystallographic directions. The method was tested on a high-resistance CdS crystals that leguvalis copper and silver, which were introduced in the electrode, which served as the anode, and purified from these impurities. It has been found that the diffusion rate of copper in a direction perpendicular to the c axis of the crystal than in a direction parallel to this axis, whereas the reverse is the silver ratio. Thus, the choice of the corresponding diffusion direction can further accelerate the process of doping or cleaning. The novelty of the method lies in the use of drift of defects and impurities to clean A2B6 crystals, as well as in the use of a particular crystallographic direction of the electric field is applied, can significantly accelerate the processes of cleaning and doping.

The development stage readiness: Ready for application

Description of the development:
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The method is based on the impurities in the drift electric field. To this end the crystal deposited on the electrodes to which a constant field is applied. Under the influence of this field defects and negatively charged impurities accumulate at the anode, and positively charged - at the cathode, resulting in purification of the crystal volume. For doping the crystal in one of the electrodes desired impurity is introduced that under the influence of an electric field "drawn" into the crystal. A2B6 doping compounds is generally carried out, with the surface diffusion or ion implantation.

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua