Purpose of the development: Nanostructures with silicon and germanium quantum dots are used to create light emitters on silicon; solving problems of integration of elements opto and microelectronics; the creation of non-volatile memory elements and objects of study quantum size effect in indirect semiconductors (Si, Ge).

Recommended application field: Manufacture of elements of nanoelectronics.

Technical characteristic: Ray: - wavelength - 1.06 mm, - the pulse energy density - 20 J / cm2, - a pulse duration of 10 ns - 25 Hz. - film deposition rate - 10.5 nm / min, - film thickness - 50-500 nm. N2 laser: - radiation: = 337nm, imp = 8 ns. - the minimum length of a measuring gate - 250 ns. The photoluminescence spectra of a time division cover the energy range - 1.4-3.2 eV: - relaxation times - 50 ns-12 s.

Advantages over analogues: Analogs are absent.

The development stage readiness: tested in laboratory condition

Description of the development:
()
Laser deposition method to obtain photoluminescent films with silicon and germanium quantum dots. Ray IAG: Nd3 + laser operating in Q-switched mode scans Si (Ge) target. Deposition takes place on the substrate in a vacuum chamber with a particle erosion torch. The quantum size effect causes the photoluminescence in the visible region of the spectrum at room temperature in indirect semiconductors - silicon and germanium. A method for the study of the photoluminescence spectra with time division. photoluminescence signal is recorded in the photon counting mode. Photoluminescence excitation radiation is performed N2 laser.

Information about newness of the development:
there are Ukrainian patents -- 3 items

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Licence's sale
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua