Purpose of the development: The devices can be used both as an independent means of control and in automatic process control system.

Recommended application field: Fiede of application: - control of temperature macrofields (melts, hot rolling, annealing of pipes and complex-shape parts, ect.); - detailed investigation of temperature micropatterns (laser treatment of surfaces, electron-beam technologies, production of wire, standard filaments, ect.). Ecsperimental prototype was introduced at the E.O. Paton Institute for Electric Welding (Kyiv) in the process of silicon treatment by the method of electronbeam noncrucible zone melting. Engineering specifications have not been developed.

Technical characteristic: Basic characteristics: - Temperature range 600 - 2000 C; - Basic sampling format 300x200; - Sampling period 0.1 s; - Spatial resolution in receiver plane 10um.

The development stage readiness: Tested experimental exploitation order

Possibility of transfer abroad:
Licence's sale
Licence's sale
Creation of joint enterprise

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua