Purpose of the development: The development is aimed at creating a crystal-geometric model of the atomic structure of hard grain boundaries and a method for determining the degree of lattice coincidence at the boundary depending on the angle of grain disorientation.

Recommended application field: The proposed model can be used to study the properties of grain boundaries and the structure of polycrystals.

Advantages over analogues: In contrast to the well-known models of the structure of grain boundaries, for example, the lattices of the nodes coincide, in which only the complete convergence of atoms at the boundary is taken into account, in the proposed model not only full but also partial coincidences of atoms at the boundary are taken into account. Development is in demand on the market of Ukraine, Germany, the USA and other countries.

The development stage readiness: Pre-production model is made

Description of the development:
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A crystal-geometric model of hard grain boundaries is proposed, which takes into account not only complete, but also partial coincidences of atoms at the boundary. Such an approximation in considering the structure of grain boundaries made it possible to obtain the value of the effective energy of grain boundaries (degree of convergence of atoms at the boundary) depending on the angle of disorientation. It has been established that the low energy of special grain boundaries is determined not only by the density of the nodes that coincide, but also to a greater extent by the density of short-period patterns with particular coincidences. As a consequence of this, the low energy of the special boundaries does not always correspond to the low inverse density of the matching nodes.

Information about newness of the development:
there are Ukrainian patents -- 1 items

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Combinated reduction to industrial level
Joint production, sale, exploitation

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua