Purpose of the development: For the use of magnetically hard film corrosion-resistant nanor alloys of the ferromagnet-diamagnet systems, thin-film precision resistors with wide surface electrical resistance and temperature coefficient of resistance at the level of 10-5 - 10-6 K-1, high-emission film cathode assemblies.

Recommended application field: Microelectronics, nanoelectronics.

Technical characteristic: Technical characteristics: coercive force - more than 1 kOe; temperature and time stability of resistors - not higher than 0.1% after 10,000 hours exposure at 80 ° C; temperature coefficient of resistance - within 10-5 -1 0-6 K-1.

Advantages over analogues: Similar thin-film alloys of immiscible systems in the world do not exist. The cost of the necessary raw materials (pure elements for the mosaic target) and materials for the manufacture of the accelerator block is insignificant due to the insignificant consumption of materials in the form of the obtained thin-film products. No additional energy costs are provided.

The development stage readiness: Ready for application

Description of the development:
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The modernized method of triple electrode ion-plasma sputtering makes it possible to obtain homogeneous thin-film materials of a new class for the needs of modern microelectronics, which are almost impossible to obtain under ordinary conditions of gravity.

Information about newness of the development:
there are Ukrainian patents -- 4 items

corresponds technical description
Ready for implementation

Possibility of transfer abroad:
Combinated reduction to industrial level

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua