Purpose of the development: Designed to convert the magnetic field in the current.

Recommended application field: The development can be implemented in a general-purpose instrumentation.

Technical characteristic: Main technical characteristics: - Supply voltage, 6-12; - Supply Current mA 3-5; - magnetic sensitivity mA / T 1-2; - The source impedance, 0.5-1 megohms; - Speed, 0.5-1 ms.

Advantages over analogues: On physical characteristics is not unique. Compared with the closest and most common technical analogue - Hall sensor - magnetotransistor has, firstly, two orders of magnitude greater sensitivity in volt mode, and, secondly, its technology is completely compatible with standard technological processes (epitaxial planar and CMOS) . Technical and economic characteristics of the structure as a converter make it competitive on the world market of magnetic field sensors.

The development stage readiness: Introduced in production

Technical and economic effect: The economic advantages of the sensors on the basis of the transistor structure based on the use of its production mainly resources of Ukraine, group methods of microelectronics, the lack of precious materials, low time consuming. The estimated cost of a single sensor is the same as the conventional low-power transistor and wide application, which is significantly less than the cost of the technical counterpart. Technical and economic parameters are allowed to use the sensor for a wide range of instrumentation and equipment.

Description of the development:
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Injection drift magnetically balanced type semiconductor structures, the original signal which is current. Are used as the basic elements of the magnetic field transducers, which are used for: - Measurement of magnetic induction; - Non-contact measurement of currents; - Registration of linear and angular displacements (in particular, as the position sensor in brushless DC motors); - Measuring the rotational speed. On the basis of the Lviv Radio Engineering Research Institute made an experimental batch of magnetically transistor structures as primary transducers consisting of integrated circuits, and magnetically held their experimental tests. The test results showed a 100% readiness for implementation.

Information about newness of the development:
there are inventor's certificate -- 1 items
there are patents of other countries -- 1 items

Possibility of transfer abroad:
Licence's sale

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua