Purpose of the development: Clarify the mechanisms of the processes of interaction of bulk and surface defects in materials poluprvodnikovyh with the electric field.

Recommended application field: Application of silicon wafers as sensors, pressure transducers.

Advantages over analogues: Reduced non-linearity and temperature dependence of the conversion.

The development stage readiness: tested in laboratory condition

Technical and economic effect: Reduced non-linearity and temperature dependence of the conversion.

Description of the development:
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Proposed a method for detecting the presence of dislocations in crystals decorated CdS based on analysis of the spectral shape of the edge luminescence. Modes optimized anodizing and subsequent processing of Si-wafers, which allowed to obtain samples of porous silicon with an external quantum efficiency of ~ 20%.

corresponds technical description
Guarantees stable results getting

Possibility of transfer abroad:
Licence's sale
Technological document's sale

Photo

Country Ukraine

For additional information turn to:
E-mail: gal@uintei.kiev.ua