Purpose of the development: To control the flatness of semiconductor wafers which are in the "rectified" state.

Recommended application field: Electronics manufacturing plants.

Technical characteristic: Specifications: - Controlled diameter wafers - 100; 150; 200 mm; - Measurement error flatness - 50 nm; - Standard deviation of the random component of the measurement error - 20 nm - Maximum vertical drop of surface topography on the plate length 10 mm - not more than 7 mm - Kinematic performance, plates / h: for wafers of 100 mm diameter - 90 for wafers of diameter 150 mm - 75 for wafers of diameter 200 mm - 60

Advantages over analogues: In its basic specifications developed superior installation only domestic sample EM-6019A and corresponds better to date global sample company ADE, comparing favorably to these costs.

The development stage readiness: Introduced in production

Technical and economic effect: Application installation will reduce the percentage of defects produced chips as topological pattern with submicron elements formed in the photoresist layer using a projection lens having a depth of field of a few micrometers, which does not provide a high-quality chips on the plates with the same curvature of the working surface due to image defocusing .

Description of the development:
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In the installation method used multichannel interferometer. The plant is intended for use in electronic industry enterprises as the manufacture of semiconductor wafers and substrates of gallium arsenide , sapphire , and silicon on sapphire , and for sorting them into three grades according to the parameters specified by the operator immediately before the process of photolithography. Developed installation allows you to measure the interferometric method of flatness deviation working surface of silicon wafers and substrates.

Possibility of transfer abroad:
Licence's sale
Realization of finished commodity

Photo

Country Belarus

For additional information turn to:
E-mail: gal@uintei.kiev.ua